Radu Barsan, vice president of technology at Power Integrations, said, “Our rapid pace of GaN development has delivered three ...

The high electron mobility transistor (HEMT ... market. Get a PDF brochure for Industrial Insights and Business Intelligence @ By type, the market is divided into gallium nitride (GaN), silicon ...

Gate drivers require exact voltages for the highest efficiency and system reliability. The company's new range of isolated power modules provides an economical and high-performance solution in a tiny ...

V GaN InnoMux-2 IC delivers efficiency of better than 90% from a 1000 VDC bus, supplying up to 70 W from three accurately ...

Power Integrations has introduced a new member of its InnoMux-2 family of single-stage, independently regulated multi-output ...