Using photoluminescence spectroscopy, they found that the spatial confinement along the radius of a nanowire resulted in bending of the band structure of the material. Since it is only in recent years ...

The sample being characterized is made up of a GaAs substrate that has experienced a nitridation ... The N 1s/Ga LMM envelope gives rise to a broad, complex structure. A single symmetrical component ...

Further confidence that the devices work as intended came from a comparison with a GaAs-based structure that was fabricated with identical device geometry. Whereas the emission from the Ge/SiGe ...

The academics built PV devices with an n-i-p structure and a 1 mm-thick emitter made of GaAs and selenium (SE), a 1 mm unintentionally doped GaAs layer, and a 1 mm base layer made of GaAs and zinc ...