A team led by researchers at Rensselaer Polytechnic Institute (RPI) has made a breakthrough in semiconductor development that could reshape the way we produce computer chips, optoelectronics and ...

In a study published in Journal of the American Chemical Society, a team led by Prof. Song Li from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences ...

A new technical paper titled “Mitigation of Structural Defects during the Growth of 2D van der Waals Chalcogenides by Molecular Beam Epitaxy” was published by researchers at Penn State University.

Pirouz, P. (2014). Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth. Materials Express, 4 (1), 41-53. Cowen, J., Lucas, L., Ernst, F ...

Molecular beam epitaxy (MBE) represents an essential growth technique for the fabrication of HgCdTe and CdTe thin films, providing atomic-scale precision that is critical for high-performance infrared ...

In a study published in Journal of the American Chemical Society, a team led by Prof. SONG Li from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences ...

Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing the need for crystalline substrates in epitaxy (Nanowerk Spotlight) The ...

Researchers from McMaster University and the University of Pittsburgh created a functionally complete NAND gate in a soft material using only beams of visible light. The NAND logic operation was ...

This technique offers unparalleled control over the thickness, composition, and doping levels of the layers it produces, features that are critical for advanced electronic and photonic devices. The ...